发明授权
- 专利标题： Power semiconductor module and fabrication method thereof
- 专利标题（中）： 功率半导体模块及其制造方法
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申请号： US11762276申请日： 2007-06-13
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公开(公告)号： US08283763B2公开(公告)日： 2012-10-09
- 发明人: Kazuhiro Oyama , Mutsuhiro Mori , Katsuaki Saito , Yoshihiko Koike
- 申请人： Kazuhiro Oyama , Mutsuhiro Mori , Katsuaki Saito , Yoshihiko Koike
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2006-167267 20060616
- 主分类号： H01L23/02
- IPC分类号： H01L23/02
摘要：
An elastic printed board is provided so that stress applied by the silicon gel is absorbed by the printed board. Further, the printed board is formed to be so narrow that the stress may be escaped. On the other hand, the wires on which a high voltage is applied are patterned on respective printed boards. This serves to prevent discharge through the surface of the same printed board served as current passage. This design makes it possible to hermetically close the power module, prevent intrusion of moisture or contamination as well as displacement, transformation and crack of the cover plate.
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