发明授权
US08283781B2 Semiconductor device having pad structure with stress buffer layer
有权
具有应力缓冲层的衬垫结构的半导体器件
- 专利标题： Semiconductor device having pad structure with stress buffer layer
- 专利标题（中）： 具有应力缓冲层的衬垫结构的半导体器件
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申请号： US12879512申请日： 2010-09-10
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公开(公告)号： US08283781B2公开(公告)日： 2012-10-09
- 发明人: Wei-Cheng Wu , Shang-Yun Hou , Shin-Puu Jeng , Tzuan-Horng Liu , Tzu-Wei Chiu , Chao-Wen Shih
- 申请人： Wei-Cheng Wu , Shang-Yun Hou , Shin-Puu Jeng , Tzuan-Horng Liu , Tzu-Wei Chiu , Chao-Wen Shih
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 主分类号： H01L29/40
- IPC分类号： H01L29/40
摘要：
A semiconductor device has a pad structure with a ring-shaped stress buffer layer between a metal pad and an under-bump metallization (UBM) layer. The stress buffer layer is formed of a dielectric layer with a dielectric constant less than 3.5, a polymer layer, or an aluminum layer. The stress buffer layer is a circular ring, a square ring, an octagonal ring, or any other geometric ring.