发明授权
- 专利标题： Nonvolatile memory device and related programming method
- 专利标题（中）： 非易失性存储器件及相关编程方法
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申请号： US12786724申请日： 2010-05-25
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公开(公告)号： US08284599B2公开(公告)日： 2012-10-09
- 发明人: Han Woong Yoo , Jae Hong Kim , Jun Jin Kong
- 申请人： Han Woong Yoo , Jae Hong Kim , Jun Jin Kong
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2009-0056142 20090623
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A method of programming a nonvolatile memory device comprises programming memory cells connected to a first wordline, programming memory cells connected to a second wordline, programming memory cells connected to a third line between the first wordline and the second wordline, and adjusting a threshold voltage of the memory cells connected to the first wordline to compensate for interference generated by the programming of the memory cells connected to the third wordline.
公开/授权文献
- US20100321999A1 NONVOLATILE MEMORY DEVICE AND RELATED PROGRAMMING METHOD 公开/授权日：2010-12-23
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