Invention Grant
US08284624B2 Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator
有权
电平检测器,包括电平检测器的内部电压发生器和包括内部电压发生器的半导体存储器件
- Patent Title: Level detector, internal voltage generator including level detector, and semiconductor memory device including internal voltage generator
- Patent Title (中): 电平检测器,包括电平检测器的内部电压发生器和包括内部电压发生器的半导体存储器件
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Application No.: US12691910Application Date: 2010-01-22
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Publication No.: US08284624B2Publication Date: 2012-10-09
- Inventor: Ki-Heung Kim , Yong-Ho Cho , Ji-Hoon Lim , Seong-Jin Jang , Tae-Yoon Lee
- Applicant: Ki-Heung Kim , Yong-Ho Cho , Ji-Hoon Lim , Seong-Jin Jang , Tae-Yoon Lee
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0008576 20090203; KR10-2009-0015959 20090225
- Main IPC: G11C7/04
- IPC: G11C7/04

Abstract:
A level detector, an internal voltage generator including the level detector, and a semiconductor memory device including the internal voltage generator are provided. The internal voltage generator includes a level detector that compares a threshold voltage that varies with temperature with an internal voltage to output a comparative voltage, and an internal voltage driver that adjusts an external supply voltage in response to the comparative voltage and that outputs an internal voltage.
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