Invention Grant
US08284810B1 Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
有权
在非极性或半极性含GaN材料和方法中使用选择的晶体取向的固态激光器件
- Patent Title: Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
- Patent Title (中): 在非极性或半极性含GaN材料和方法中使用选择的晶体取向的固态激光器件
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Application No.: US12534838Application Date: 2009-08-03
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Publication No.: US08284810B1Publication Date: 2012-10-09
- Inventor: Rajat Sharma , Eric M. Hall , Christiane Poblenz , Mark P. D'Evelyn
- Applicant: Rajat Sharma , Eric M. Hall , Christiane Poblenz , Mark P. D'Evelyn
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
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