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1.发明授权Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods 有权在非极性或半极性含GaN材料和方法中使用选择的晶体取向的固态激光器件公开(公告)号：US08284810B1
公开(公告)日：2012-10-09
申请号：US12534838
申请日：2009-08-03
IPC分类号： H01S5/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/2201 , H01S5/34333
摘要： An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
摘要翻译： 边缘发射固态激光器和方法。 激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。 激光器的边缘包括{11-2±6}面。 激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。 该激光器可用于光学数据存储，投影显示器和一般照明源。
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2.发明申请Solid State Laser Device Using a Selected Crystal Orientation in Non-Polar or Semi-Polar GaN Containing Materials and Methods 有权在非极性或半极化GaN材料和方法中使用选定的晶体取向的固态激光器件公开(公告)号：US20130064261A1
公开(公告)日：2013-03-14
申请号：US13606894
申请日：2012-09-07
IPC分类号： H01L21/02 , H01S5/34 , H01L29/04 , H01L29/201 , H01L29/161 , H01L29/22
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/2201 , H01S5/34333
摘要： An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1−2±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
摘要翻译： 边缘发射固态激光器和方法。 激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。 激光器的边缘包括{1 1-2±6}面。 激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。 该激光器可用于光学数据存储，投影显示器和一般照明源。
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3.发明授权Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods 有权在非极性或半极性含GaN材料和方法中使用选择的晶体取向的固态激光器件公开(公告)号：US08494017B2
公开(公告)日：2013-07-23
申请号：US13606894
申请日：2012-09-07
IPC分类号： H01S5/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01S5/0202 , H01S5/1082 , H01S5/1085 , H01S5/2201 , H01S5/34333
摘要： An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1−2±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.
摘要翻译： 边缘发射固态激光器和方法。 激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。 激光器的边缘包括{1 1-2±6}面。 激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。 该激光器可用于光学数据存储，投影显示器和一般照明源。
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公开(公告)号：US08455894B1
公开(公告)日：2013-06-04
申请号：US12569844
申请日：2009-09-29
申请人： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall
发明人： Mark P. D'Evelyn , Rajat Sharma , Eric M. Hall
IPC分类号： H01L33/02
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/0079 , H01L33/32 , H01L33/382 , H01L2933/0083
摘要： A high efficiency photonic-crystal light emitting diode comprises a flip-chipped stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1. Each layer has a high crystalline quality, with a dislocation density below about 105 cm−2. The backside of the stack, exposed by removal of the original substrate, has a photonic crystal pattern for improved light extraction.
摘要翻译： 高效率的光子晶体发光二极管包括Al x In y Ga 1-x-y N层的倒装堆叠，其中0 @ x，y，x + y @ 1。 每层具有高的结晶质量，位错密度低于约105cm-2。 通过去除原始基板曝光的堆叠的背面具有用于改进光提取的光子晶体图案。
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5.发明授权Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors 有权使用非极性或半极性含镓材料和透明荧光体的极化白光装置公开(公告)号：US08299473B1
公开(公告)日：2012-10-30
申请号：US12754886
申请日：2010-04-06
CPC分类号： H01L33/50 , H01L33/16 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
摘要翻译： 发光器件包括具有覆盖表面区域的表面区域和发光二极管的衬底。 发光二极管制造在含有半极性或非极性GaN的衬底上并且发射第一波长的电磁辐射。 二极管包括以电子波函数和空穴波函数为特征的量子阱区域。 电子波函数和空穴波函数在量子阱区域的预定空间区域内基本上重叠。 该器件具有覆盖发光二极管的透明磷光体。 磷光体被基本上极化的发射激发以发射第二波长的电磁辐射。
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公开(公告)号：US08482104B2
公开(公告)日：2013-07-09
申请号：US13346507
申请日：2012-01-09
IPC分类号： H01L29/20
CPC分类号： H01L21/02433 , H01L21/0237 , H01L21/02458 , H01L21/02499 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L29/2003
摘要： A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.
摘要翻译： 描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。
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公开(公告)号：US20120199952A1
公开(公告)日：2012-08-09
申请号：US13346507
申请日：2012-01-09
CPC分类号： H01L21/02433 , H01L21/0237 , H01L21/02458 , H01L21/02499 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L29/2003
摘要： A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.
摘要翻译： 描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。
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公开(公告)号：US08354679B1
公开(公告)日：2013-01-15
申请号：US12569337
申请日：2009-09-29
申请人： Mark P. D'Evelyn , Rajat Sharma
发明人： Mark P. D'Evelyn , Rajat Sharma
CPC分类号： H01L33/405 , H01L24/81 , H01L33/0079 , H01L33/382 , H01L33/387 , H01L2224/16225 , H01L2224/81001
摘要： A high efficiency microcavity light emitting diode comprises a stack of AlxInyGa1-x-yN layers, where 0≦x, y, x+y≦1, with each layer having a high crystalline quality. The stack has a uniform thickness less than 6λ/n, with an active layer centered approximately (2i+1)λ/(4n) from a reflective electrical contact, where λ is the peak emission wavelength, n is the index of refraction at the peak emission wavelength, i is an integer, and each layer within the stack has a dislocation density below about 105 cm−2.
摘要翻译： 高效微腔发光二极管包括一层Al x In y Ga 1-x-y N层，其中0＆lt; nlE; x，y，x + y＆nlE; 1，每层具有高结晶质量。 堆叠具有小于6λ/ n的均匀厚度，其中有效层从反射电接触中心为大约（2i + 1）λ/（4n），其中λ是峰值发射波长，n是在 峰值发射波长，i是整数，并且堆叠内的每个层具有低于约105cm -2的位错密度。
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9.发明申请White Light Devices Using Non-polar or Semipolar Gallium Containing Materials and Phosphors 有权使用非极性或半极性含镓材料和荧光粉的白光器件公开(公告)号：US20120187371A1
公开(公告)日：2012-07-26
申请号：US13360535
申请日：2012-01-27
申请人： James W. Raring , Eric M. Hall , Mark P. D'Evelyn
发明人： James W. Raring , Eric M. Hall , Mark P. D'Evelyn
CPC分类号： H01L33/502 , H01L33/16 , H01L33/32 , H01L33/54 , H01L33/58 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/92247 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01037 , H01L2924/01057 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.
摘要翻译： 封装的光学器件包括具有在半极性或非极性GaN衬底上制造的发光二极管器件的表面区域的衬底。 LED发射偏振光，其特征在于重叠的电子波函数和空穴波函数。 封装内的荧光体被偏振光激发，并且响应地发射第二波长的电磁辐射。
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10.发明授权White light devices using non-polar or semipolar gallium containing materials and phosphors 有权使用非极性或半极性含镓材料和荧光体的白光器件公开(公告)号：US08558265B2
公开(公告)日：2013-10-15
申请号：US13360535
申请日：2012-01-27
申请人： James W. Raring , Eric M. Hall , Mark P. D'Evelyn
发明人： James W. Raring , Eric M. Hall , Mark P. D'Evelyn
IPC分类号： H01L33/00
CPC分类号： H01L33/502 , H01L33/16 , H01L33/32 , H01L33/54 , H01L33/58 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/92247 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01037 , H01L2924/01057 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.
摘要翻译： 封装的光学器件包括具有在半极性或非极性GaN衬底上制造的发光二极管器件的表面区域的衬底。 LED发射偏振光，其特征在于重叠的电子波函数和空穴波函数。 封装内的荧光体被偏振光激发，并且响应地发射第二波长的电磁辐射。
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