发明授权
- 专利标题： Semiconductor device having through electrode and method of fabricating the same
- 专利标题（中）： 具有通孔电极的半导体器件及其制造方法
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申请号： US12270386申请日： 2008-11-13
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公开(公告)号： US08288278B2公开(公告)日： 2012-10-16
- 发明人: Ki-Tae Park , Kang-Wook Lee , Hyun-Kyoung Kim
- 申请人： Ki-Tae Park , Kang-Wook Lee , Hyun-Kyoung Kim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2007-0116070 20071114
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A semiconductor device includes a substrate, and a through electrode passing through the substrate. The semiconductor device has a pad region and a through electrode region. A pad covers the pad region, extends into the through electrode region, and delimits an opening in the through electrode region. A through electrode extends through the semiconductor substrate below the hole in the pad in the through region.
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