发明授权
- 专利标题： Non-volatile memory cell with precessional switching
- 专利标题（中）： 具有进动切换的非易失性存储单元
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申请号： US13091372申请日： 2011-04-21
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公开(公告)号： US08289759B2公开(公告)日： 2012-10-16
- 发明人: Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar V. Dimitrov , Wei Tian , Brian S. Lee
- 申请人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar V. Dimitrov , Wei Tian , Brian S. Lee
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Hall Estill Attorneys at Law
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
公开/授权文献
- US20110194337A1 Non-Volatile Memory Cell With Precessional Switching 公开/授权日：2011-08-11
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