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    Variable write and read methods for resistive random access memory
    5.
    发明授权
    Variable write and read methods for resistive random access memory 失效
    电阻随机存取存储器的可变写和读方法

    公开(公告)号：US08054675B2

    公开(公告)日：2011-11-08

    申请号：US13028246

    申请日：2011-02-16

    申请人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    发明人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0057

    摘要： Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

    摘要翻译： 公开了用于电阻随机存取存储器（RRAM）的可变写和读方法。 这些方法包括初始化写入序列并验证RRAM单元的电阻状态。 如果需要写入脉冲，则通过RRAM单元施加两个或更多写入脉冲，以将期望的数据状态写入RRAM单元。 每个后续写入脉冲具有基本上相同或更大的写入脉冲持续时间。 随后的写入脉冲被施加到RRAM单元，直到RRAM单元处于期望的数据状态，或直到预定数量的写入脉冲已经被施加到RRAM单元为止。 还公开了一种读取方法，其中随后的读取脉冲通过RRAM单元被施加，直到读取成功或直到预定数量的读取脉冲已经被应用于RRAM单元为止。

    VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY
    6.
    发明申请
    VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY 有权
    用于电阻随机访问存储器的可变写入和读取方法

    公开(公告)号：US20100238712A1

    公开(公告)日：2010-09-23

    申请号：US12794009

    申请日：2010-06-04

    申请人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    发明人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0057

    摘要： Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

    摘要翻译： 公开了用于电阻随机存取存储器（RRAM）的可变写和读方法。 这些方法包括初始化写入序列并验证RRAM单元的电阻状态。 如果需要写入脉冲，则通过RRAM单元施加两个或更多写入脉冲，以将期望的数据状态写入RRAM单元。 每个后续写入脉冲具有基本上相同或更大的写入脉冲持续时间。 随后的写入脉冲被施加到RRAM单元，直到RRAM单元处于期望的数据状态，或直到预定数量的写入脉冲已经被施加到RRAM单元为止。 还公开了一种读取方法，其中随后的读取脉冲通过RRAM单元被施加，直到读取成功或直到预定数量的读取脉冲已经被应用于RRAM单元为止。

    VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY
    7.
    发明申请
    VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY 失效
    用于电阻随机访问存储器的可变写入和读取方法

    公开(公告)号：US20110134682A1

    公开(公告)日：2011-06-09

    申请号：US13028246

    申请日：2011-02-16

    申请人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    发明人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0057

    摘要： Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

    摘要翻译： 公开了用于电阻随机存取存储器（RRAM）的可变写和读方法。 这些方法包括初始化写入序列并验证RRAM单元的电阻状态。 如果需要写入脉冲，则通过RRAM单元施加两个或更多写入脉冲，以将期望的数据状态写入RRAM单元。 每个后续写入脉冲具有基本上相同或更大的写入脉冲持续时间。 随后的写入脉冲被施加到RRAM单元，直到RRAM单元处于期望的数据状态，或直到预定数量的写入脉冲已经被施加到RRAM单元为止。 还公开了一种读取方法，其中随后的读取脉冲通过RRAM单元被施加，直到读取成功或直到预定数量的读取脉冲已经被应用于RRAM单元为止。

    Variable write and read methods for resistive random access memory
    9.
    发明授权
    Variable write and read methods for resistive random access memory 有权
    电阻随机存取存储器的可变写和读方法

    公开(公告)号：US07826255B2

    公开(公告)日：2010-11-02

    申请号：US12210526

    申请日：2008-09-15

    申请人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    发明人： Haiwen Xi ,  Hongyue Liu ,  Xiaobin Wang ,  Yong Lu ,  Yiran Chen ,  Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Hai Li

    IPC分类号： G11C11/00 ,  G11C11/14

    CPC分类号： G11C11/16 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0057

    摘要： Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.

    摘要翻译： 公开了用于电阻随机存取存储器（RRAM）的可变写和读方法。 这些方法包括初始化写入序列并验证RRAM单元的电阻状态。 如果需要写入脉冲，则通过RRAM单元施加两个或更多写入脉冲，以将期望的数据状态写入RRAM单元。 每个后续写入脉冲具有基本上相同或更大的写入脉冲持续时间。 随后的写入脉冲被施加到RRAM单元，直到RRAM单元处于期望的数据状态，或直到预定数量的写入脉冲已经被施加到RRAM单元为止。 还公开了一种读取方法，其中随后的读取脉冲通过RRAM单元被施加，直到读取成功或直到预定数量的读取脉冲已经被应用于RRAM单元为止。