Invention Grant
- Patent Title: Process for adapting resonance frequency of a BAW resonator
- Patent Title (中): 适应BAW谐振器谐振频率的过程
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Application No.: US12391801Application Date: 2009-02-24
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Publication No.: US08291559B2Publication Date: 2012-10-23
- Inventor: Habbo Heinze , Edgar Schmidhammer , Monika Schmiedgen
- Applicant: Habbo Heinze , Edgar Schmidhammer , Monika Schmiedgen
- Applicant Address: DE Munich
- Assignee: Epcos AG
- Current Assignee: Epcos AG
- Current Assignee Address: DE Munich
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L41/22
- IPC: H01L41/22 ; H01L41/00 ; H04R17/00 ; H01R43/00 ; H02N2/00

Abstract:
A method of manufacturing a filter circuit including series and parallel coupled BAW resonators is given which compensates for frequency tolerances of the resonators which are due to the manufacturing process. The new method includes measuring a resonance frequency of at least one type of the BAW resonators produced on a wafer and defining a deviation from a desired frequency. A trimming layer is then deposited onto the entire wafer. At last, a thickness portion of the trimming layer is selectively removed, the portion being dependent on a location on the wafer and on the calculated deviation of the resonance frequency at this location.
Public/Granted literature
- US20100212127A1 Process for Adapting Resonance Frequency of a BAW Resonator Public/Granted day:2010-08-26
Information query
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