发明授权
US08291966B2 Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices
失效
具有改善的散热的微电子器件和用于冷却微电子器件的方法
- 专利标题: Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices
- 专利标题(中): 具有改善的散热的微电子器件和用于冷却微电子器件的方法
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申请号: US11608648申请日: 2006-12-08
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公开(公告)号: US08291966B2公开(公告)日: 2012-10-23
- 发明人: Joseph T. Lindgren , Warren M. Farnworth , William M. Hiatt , Nishant Sinha
- 申请人: Joseph T. Lindgren , Warren M. Farnworth , William M. Hiatt , Nishant Sinha
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: F28F7/02
- IPC分类号: F28F7/02 ; F28D15/02
摘要:
Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.
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