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1.发明申请MICROELECTRONIC DEVICES WITH IMPROVED HEAT DISSIPATION AND METHODS FOR COOLING MICROELECTRONIC DEVICES 有权具有改进的散热装置的微电子装置和用于冷却微电子装置的方法公开(公告)号：US20130003303A1
公开(公告)日：2013-01-03
申请号：US13612337
申请日：2012-09-12
IPC分类号： H05K7/20
CPC分类号： H01L23/367 , H01L23/427 , H01L24/31 , H01L2224/16 , H01L2924/00014 , H01L2924/01033 , H01L2924/014 , H01L2924/10158 , H01L2924/19041 , H01L2224/0401
摘要： Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.
摘要翻译： 本文公开了具有改善的散热的微电子器件，制造微电子器件的方法以及冷却微电子器件的方法。 在一个实施例中，微电子器件包括具有第一表面，与第一表面相对的第二表面的微电子衬底以及至少靠近第一表面的多个有源器件。 第二表面具有增加第二表面的表面积的多个传热表面特征。 在另一个实施例中，具有散热器和单相或多相热导体的外壳可以邻近第二表面定位以传递来自有源器件的热量。
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2.发明授权Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices 有权具有改善的散热的微电子器件和用于冷却微电子器件的方法公开(公告)号：US08592254B2
公开(公告)日：2013-11-26
申请号：US13612337
申请日：2012-09-12
IPC分类号： H01L21/44
CPC分类号： H01L23/367 , H01L23/427 , H01L24/31 , H01L2224/16 , H01L2924/00014 , H01L2924/01033 , H01L2924/014 , H01L2924/10158 , H01L2924/19041 , H01L2224/0401
摘要： Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.
摘要翻译： 本文公开了具有改善的散热的微电子器件，制造微电子器件的方法以及冷却微电子器件的方法。 在一个实施例中，微电子器件包括具有第一表面，与第一表面相对的第二表面的微电子衬底以及至少靠近第一表面的多个有源器件。 第二表面具有增加第二表面的表面积的多个传热表面特征。 在另一个实施例中，具有散热器和单相或多相热导体的外壳可以邻近第二表面定位以传递来自有源器件的热量。
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3.发明授权Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices 失效具有改善的散热的微电子器件和用于冷却微电子器件的方法公开(公告)号：US08291966B2
公开(公告)日：2012-10-23
申请号：US11608648
申请日：2006-12-08
CPC分类号： H01L23/367 , H01L23/427 , H01L24/31 , H01L2224/16 , H01L2924/00014 , H01L2924/01033 , H01L2924/014 , H01L2924/10158 , H01L2924/19041 , H01L2224/0401
摘要： Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.
摘要翻译： 本文公开了具有改善的散热的微电子器件，制造微电子器件的方法以及冷却微电子器件的方法。 在一个实施例中，微电子器件包括具有第一表面，与第一表面相对的第二表面的微电子衬底以及至少靠近第一表面的多个有源器件。 第二表面具有增加第二表面的表面积的多个传热表面特征。 在另一个实施例中，具有散热器和单相或多相热导体的外壳可以邻近第二表面定位以传递来自有源器件的热量。
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4.发明授权Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices 有权具有改善的散热的微电子器件和用于冷却微电子器件的方法公开(公告)号：US07183133B2
公开(公告)日：2007-02-27
申请号：US10767232
申请日：2004-01-28
IPC分类号： H01L21/44
CPC分类号： H01L23/367 , H01L23/427 , H01L24/31 , H01L2224/16 , H01L2924/00014 , H01L2924/01033 , H01L2924/014 , H01L2924/10158 , H01L2924/19041 , H01L2224/0401
摘要： Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.
摘要翻译： 本文公开了具有改善的散热的微电子器件，制造微电子器件的方法以及冷却微电子器件的方法。 在一个实施例中，微电子器件包括具有第一表面，与第一表面相对的第二表面的微电子衬底以及至少靠近第一表面的多个有源器件。 第二表面具有增加第二表面的表面积的多个传热表面特征。 在另一个实施例中，具有散热器和单相或多相热导体的外壳可以邻近第二表面定位以传递来自有源器件的热量。
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5.发明授权Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices 失效具有改善的散热的微电子器件和用于冷却微电子器件的方法公开(公告)号：US06710442B1
公开(公告)日：2004-03-23
申请号：US10228906
申请日：2002-08-27
IPC分类号： H01L2310
CPC分类号： H01L23/367 , H01L23/427 , H01L24/31 , H01L2224/16 , H01L2924/00014 , H01L2924/01033 , H01L2924/014 , H01L2924/10158 , H01L2924/19041 , H01L2224/0401
摘要： Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.
摘要翻译： 本文公开了具有改善的散热的微电子器件，制造微电子器件的方法以及冷却微电子器件的方法。 在一个实施例中，微电子器件包括具有第一表面，与第一表面相对的第二表面的微电子衬底以及至少靠近第一表面的多个有源器件。 第二表面具有增加第二表面的表面积的多个传热表面特征。 在另一个实施例中，具有散热器和单相或多相热导体的外壳可以邻近第二表面定位以传递来自有源器件的热量。
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6.发明授权公开(公告)号：US07594322B2
公开(公告)日：2009-09-29
申请号：US11941358
申请日：2007-11-16
IPC分类号： H01K3/10
CPC分类号： H05K3/426 , H01L21/486 , H01L23/147 , H01L23/15 , H01L23/49816 , H01L23/49827 , H01L2924/0002 , H01L2924/09701 , H05K3/062 , H05K3/108 , H05K3/244 , H05K2203/072 , Y10T29/49117 , Y10T29/49123 , Y10T29/49126 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156 , Y10T29/4916 , Y10T29/49163 , Y10T29/49165 , Y10T29/49167 , H01L2924/00
摘要： A method of fabricating a substrate is disclosed. Apertures are formed in a substrate blank. A conductive layer is formed on opposing surfaces of the substrate, as well as inside the apertures. Conductive elements are defined on one or both opposing surfaces by masking and etching. Additional layers of conductive materials may be used to provide a barrier layer and a noble metal cap for the conductive elements. The methods of the present invention may be used to fabricate an interposer for use in packaging semiconductor devices or a test substrate. Substrate precursor structures are also disclosed.
摘要翻译： 公开了一种制造衬底的方法。 孔径形成在基板坯件中。 导电层形成在基板的相对表面上以及孔内。 通过掩模和蚀刻在一个或两个相对的表面上限定导电元件。 可以使用附加的导电材料层来提供用于导电元件的阻挡层和贵金属盖。 本发明的方法可用于制造用于封装半导体器件或测试基板的插入器。 还公开了底物前体结构。
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7.发明授权Method for fabricating semiconductor components having encapsulated, bonded, interconnect contacts on redistribution contacts 有权用于制造在再分布接点上具有封装的，接合的互连触头的半导体部件的方法公开(公告)号：US07256116B2
公开(公告)日：2007-08-14
申请号：US11589464
申请日：2006-10-30
IPC分类号： H01L21/44
CPC分类号： H01L23/48 , B33Y80/00 , H01L21/44 , H01L21/6836 , H01L23/3114 , H01L23/49531 , H01L23/49575 , H01L24/06 , H01L24/11 , H01L24/12 , H01L24/27 , H01L24/94 , H01L2221/68327 , H01L2224/02333 , H01L2224/0401 , H01L2224/04042 , H01L2224/06136 , H01L2224/11334 , H01L2224/1134 , H01L2224/13022 , H01L2224/13083 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/136 , H01L2224/16 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A method for fabricating a semiconductor component includes the steps of providing a semiconductor die, forming a plurality of redistribution contacts on the die, forming a plurality of interconnect contacts on the redistribution contacts, and forming an insulating layer on the interconnect contacts while leaving the tip portions exposed. The method also includes the step of forming terminal contacts on the interconnect contacts, or alternately forming conductors in electrical communication with the interconnect contacts and then forming terminal contacts in electrical communication with the conductors.
摘要翻译： 一种用于制造半导体部件的方法包括以下步骤：提供半导体管芯，在管芯上形成多个再分布接触，在再分布接触上形成多个互连触点，并在互连触点上形成绝缘层，同时留下尖端 暴露部分 该方法还包括在互连触点上形成端子触点的步骤，或者交替地形成与互连触点电连通的导体，然后形成与导体电连通的端子触点。
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8.发明授权公开(公告)号：US07316063B2
公开(公告)日：2008-01-08
申请号：US10755905
申请日：2004-01-12
CPC分类号： H05K3/426 , H01L21/486 , H01L23/147 , H01L23/15 , H01L23/49816 , H01L23/49827 , H01L2924/0002 , H01L2924/09701 , H05K3/062 , H05K3/108 , H05K3/244 , H05K2203/072 , Y10T29/49117 , Y10T29/49123 , Y10T29/49126 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156 , Y10T29/4916 , Y10T29/49163 , Y10T29/49165 , Y10T29/49167 , H01L2924/00
摘要： A method of fabricating a substrate is disclosed. Apertures are formed in a substrate blank. A conductive layer is formed on opposing surfaces of the substrate, as well as inside the apertures. Conductive elements are defined on one or both opposing surfaces by masking and etching. Additional layers of conductive materials may be used to provide a barrier layer and a noble metal cap for the conductive elements. The methods of the present invention may be used to fabricate an interposer for use in packaging semiconductor devices or a test substrate. Substrate precursor structures are also disclosed.
摘要翻译： 公开了一种制造衬底的方法。 孔径形成在基板坯件中。 导电层形成在基板的相对表面上以及孔内。 通过掩模和蚀刻在一个或两个相对的表面上限定导电元件。 可以使用附加的导电材料层来提供用于导电元件的阻挡层和贵金属盖。 本发明的方法可用于制造用于封装半导体器件或测试基板的插入器。 还公开了底物前体结构。
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9.发明授权Method of fabricating semiconductor component having encapsulated, bonded, interconnect contacts 有权制造具有封装的，接合的互连触头的半导体部件的方法公开(公告)号：US06803303B1
公开(公告)日：2004-10-12
申请号：US10193567
申请日：2002-07-11
IPC分类号： H01L2144
CPC分类号： H01L23/48 , B33Y80/00 , H01L21/44 , H01L21/6836 , H01L23/3114 , H01L23/49531 , H01L23/49575 , H01L24/06 , H01L24/11 , H01L24/12 , H01L24/27 , H01L24/94 , H01L2221/68327 , H01L2224/02333 , H01L2224/0401 , H01L2224/04042 , H01L2224/06136 , H01L2224/11334 , H01L2224/1134 , H01L2224/13022 , H01L2224/13083 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/136 , H01L2224/16 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor component includes a die having a pattern of die contacts, and interconnect contacts bonded to the die contacts and encapsulated in an insulating layer. The component also includes terminal contacts formed on tip portions of the interconnect contacts. Alternately the component can include conductors and bonding pads in electrical communication with the interconnect contacts configured to redistribute the pattern of the die contacts. A method for fabricating the component includes the steps of forming the interconnect contacts on the die contacts, and forming the insulating layer on the interconnect contacts while leaving the tip portions exposed. The method also includes the step of forming the terminal contacts on the interconnect contacts, or alternately forming the conductors and bonding pads in electrical communication with the interconnect contacts and then forming the terminal contacts on the bonding pads.
摘要翻译： 半导体部件包括具有芯片触点图案的芯片，以及接合到芯片触点并且封装在绝缘层中的互连触点。 该部件还包括形成在互连触点的尖端部分上的端子触头。 或者，该部件可以包括导体和与构造成重新分布芯片触点的图案的互连触点电连通的焊盘。 一种用于制造该部件的方法包括以下步骤：在裸片触点上形成互连触点，并在互连触点上形成绝缘层，同时使尖端部分露出。 该方法还包括在互连触点上形成端子触点的步骤，或者交替地形成与互连触点电连通的导体和焊盘，然后在焊盘上形成端子触点。
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10.发明授权公开(公告)号：US07603772B2
公开(公告)日：2009-10-20
申请号：US11717946
申请日：2007-03-13
CPC分类号： H05K3/426 , H01L21/486 , H01L23/147 , H01L23/15 , H01L23/49816 , H01L23/49827 , H01L2924/0002 , H01L2924/09701 , H05K3/062 , H05K3/108 , H05K3/244 , H05K2203/072 , Y10T29/49117 , Y10T29/49123 , Y10T29/49126 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156 , Y10T29/4916 , Y10T29/49163 , Y10T29/49165 , Y10T29/49167 , H01L2924/00
摘要： Substrate precursor structures include a substrate blank having at least one aperture extending substantially through the substrate blank. At least a portion of at least one conductive layer covers a surface of the at least one aperture of the substrate blank. A mask pattern covers a portion of the at least one conductive layer and exposes another portion of the at least one conductive layer to define at least one conductive element, at least a portion of which extends over the surface of the at least one aperture.
摘要翻译： 衬底前体结构包括具有基本上延伸穿过衬底坯料的至少一个孔的衬底坯料。 至少一个导电层的至少一部分覆盖衬底坯料的至少一个孔的表面。 掩模图案覆盖所述至少一个导电层的一部分并且暴露所述至少一个导电层的另一部分以限定至少一个导电元件，其至少一部分在所述至少一个孔的表面上延伸。
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