发明授权
- 专利标题: Fabrication method of semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件的制造方法
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申请号: US13295336申请日: 2011-11-14
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公开(公告)号: US08292159B2公开(公告)日: 2012-10-23
- 发明人: Hiroshi Maki , Yukio Tani
- 申请人: Hiroshi Maki , Yukio Tani
- 申请人地址: JP Kanagawa JP Tokyo
- 专利权人: Renesas Eletronics Corporation,Renesas Eastern Japan Semiconductor, Inc.
- 当前专利权人: Renesas Eletronics Corporation,Renesas Eastern Japan Semiconductor, Inc.
- 当前专利权人地址: JP Kanagawa JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2003-327046 20030919
- 主分类号: B23K31/02
- IPC分类号: B23K31/02
摘要:
Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
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