发明授权
- 专利标题： Device housing and method for making the same
- 专利标题（中）： 设备外壳及其制作方法
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申请号： US13215682申请日： 2011-08-23
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公开(公告)号： US08293345B1公开(公告)日： 2012-10-23
- 发明人: Hsin-Pei Chang , Wen-Rong Chen , Huann-Wu Chiang , Cheng-Shi Chen , Nan Ma
- 申请人： Hsin-Pei Chang , Wen-Rong Chen , Huann-Wu Chiang , Cheng-Shi Chen , Nan Ma
- 申请人地址： CN Shenzhen, Guangdong Province TW Tu-Cheng, New Taipei
- 专利权人： Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人： Hong Fu Jin Precision Industry (ShenZhen) Co., Ltd.,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址： CN Shenzhen, Guangdong Province TW Tu-Cheng, New Taipei
- 代理机构： Altis Law Group, Inc.
- 优先权： CN201110081194 20110331
- 主分类号： B29D22/00
- IPC分类号： B29D22/00 ; B32B19/04 ; B32B15/04 ; B32B15/00 ; C23C14/00
摘要：
A device housing is described. The device housing includes an aluminum alloy substrate and a compound corrosion resistant layer formed on the substrate. The compound corrosion resistant layer includes two crystalline films and a non-crystalline film formed between the crystalline films. One of the crystalline films is formed on the substrate. The crystalline film is a chromium-oxygen-nitrogen film or an aluminum-oxygen-nitrogen film. The non-crystalline film is an aluminum oxide film or a silicon dioxide film. A method for making the device housing is also described.
公开/授权文献
- US20120251746A1 DEVICE HOUSING AND METHOD FOR MAKING THE SAME 公开/授权日：2012-10-04
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