Invention Grant
- Patent Title: Method of manufacturing thin film transistor substrate
- Patent Title (中): 制造薄膜晶体管基板的方法
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Application No.: US13024898Application Date: 2011-02-10
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Publication No.: US08293564B2Publication Date: 2012-10-23
- Inventor: Ju-Han Bae , Jang-Kyum Kim
- Applicant: Ju-Han Bae , Jang-Kyum Kim
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR2008-25997 20080320
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
A thin film transistor substrate includes a color filter layer and a gate line. The color filter layer has a reverse taper shape, which is used to pattern the gate line without a separate mask. Thus, the total number of masks used to manufacture the thin film transistor substrate can be reduced, thereby reducing the manufacturing cost and improving the productivity.
Public/Granted literature
- US20110129952A1 THIN FILM TRANSISTOR SUBSTRATES AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-06-02
Information query
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