Invention Grant
US08294264B2 Radiate under-bump metallization structure for semiconductor devices
有权
用于半导体器件的辐射凸块下金属化结构
- Patent Title: Radiate under-bump metallization structure for semiconductor devices
- Patent Title (中): 用于半导体器件的辐射凸块下金属化结构
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Application No.: US12750221Application Date: 2010-03-30
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Publication No.: US08294264B2Publication Date: 2012-10-23
- Inventor: Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
- Applicant: Tzu-Yu Wang , Chi-Chun Hsieh , An-Jhih Su , Hsien-Wei Chen , Shin-Puu Jeng , Liwei Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52
Abstract:
An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.
Public/Granted literature
- US20110241201A1 Radiate Under-Bump Metallization Structure for Semiconductor Devices Public/Granted day:2011-10-06
Information query
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