Invention Grant
- Patent Title: Resistive-switching memory element
- Patent Title (中): 电阻式开关存储元件
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Application No.: US12603510Application Date: 2009-10-21
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Publication No.: US08298891B1Publication Date: 2012-10-30
- Inventor: Tony Chiang , Prashant Phatak , Chi-I Lang
- Applicant: Tony Chiang , Prashant Phatak , Chi-I Lang
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.
Information query
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