发明授权
US08298894B2 Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer
有权
通过选择性去除阻挡层,在高k金属栅电极结构中进行功函数调整
- 专利标题: Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer
- 专利标题(中): 通过选择性去除阻挡层,在高k金属栅电极结构中进行功函数调整
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申请号: US12785185申请日: 2010-05-21
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公开(公告)号: US08298894B2公开(公告)日: 2012-10-30
- 发明人: Markus Lenski , Klaus Hempel , Vivien Schroeder , Robert Binder , Joachim Metzger
- 申请人: Markus Lenski , Klaus Hempel , Vivien Schroeder , Robert Binder , Joachim Metzger
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Williams, Morgan & Amerson, P.C.
- 优先权: DE102009023376 20090529
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.