发明授权
- 专利标题： CMOS structure with multiple spacers
- 专利标题（中）： 具有多个间隔物的CMOS结构
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申请号： US12757517申请日： 2010-04-09
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公开(公告)号： US08299508B2公开(公告)日： 2012-10-30
- 发明人: Bor Chiuan Hsieh , Han-Ping Chung , Chih-Hsin Ko , Bor-Wen Chan , Hun-Jan Tao
- 申请人： Bor Chiuan Hsieh , Han-Ping Chung , Chih-Hsin Ko , Bor-Wen Chan , Hun-Jan Tao
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8234 ; H01L21/8238
摘要：
A semiconductor device includes a substrate having shallow trench isolation and source/drain regions located therein, a gate stack located on the substrate between the source/drain regions, a first gate spacer on the sidewall of the gate stack, and a second gate spacer on the sidewall of the first gate spacer.
公开/授权文献
- US20110031538A1 CMOS STRUCTURE WITH MULTIPLE SPACERS 公开/授权日：2011-02-10
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