Invention Grant
- Patent Title: Semiconductor optoelectronic structure
- Patent Title (中): 半导体光电结构
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Application No.: US12618774Application Date: 2009-11-15
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Publication No.: US08299555B2Publication Date: 2012-10-30
- Inventor: Tzung-I Su , Chao-An Su , Ming-I Wang , Bang-Chiang Lan , Tzung-Han Tan , Hui-Min Wu , Chien-Hsin Huang , Min Chen , Meng-Jia Lin
- Applicant: Tzung-I Su , Chao-An Su , Ming-I Wang , Bang-Chiang Lan , Tzung-Han Tan , Hui-Min Wu , Chien-Hsin Huang , Min Chen , Meng-Jia Lin
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
A method of fabricating a semiconductor optoelectronic structure is provided. First, a substrate is provided, and a waveguide is formed therein, and then a plurality of dielectric layers is formed on the waveguide. Next, a contact pad and a passivation layer are provided on the dielectric layers and a patterned mask layer is formed thereon. Last, an etching process is provided by using the patterned mask layer to expose the contact pad and remove a portion of the passivation layer and the dielectric layers to form a transformer.
Public/Granted literature
- US20110115040A1 Semiconductor Optoelectronic Structure and the Fabricating Method Thereof Public/Granted day:2011-05-19
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