Invention Grant
- Patent Title: Through wafer vias and method of making same
- Patent Title (中): 通过晶圆通孔及其制作方法
-
Application No.: US12188236Application Date: 2008-08-08
-
Publication No.: US08299566B2Publication Date: 2012-10-30
- Inventor: Hanyi Ding , Alvin Jose Joseph , Anthony Kendall Stamper
- Applicant: Hanyi Ding , Alvin Jose Joseph , Anthony Kendall Stamper
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Richard Kotulak
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/763

Abstract:
A method of forming and structure for through wafer vias and signal transmission lines formed of through wafer vias. The method of forming through wafer vias includes forming an array of through wafer vias comprising at least one electrically conductive through wafer via and at least one electrically non-conductive through wafer via through a semiconductor substrate having a top surface and an opposite bottom surface, each through wafer via of the array of through wafer vias extending from the top surface of the substrate to the bottom surface of the substrate.
Public/Granted literature
- US20100032810A1 THROUGH WAFER VIAS AND METHOD OF MAKING SAME Public/Granted day:2010-02-11
Information query
IPC分类: