发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12619561申请日: 2009-11-16
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公开(公告)号: US08299600B2公开(公告)日: 2012-10-30
- 发明人: Yukihiro Sato , Katsuhiko Funatsu , Hiroyuki Nakamura
- 申请人: Yukihiro Sato , Katsuhiko Funatsu , Hiroyuki Nakamura
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2008-294816 20081118
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A semiconductor device is provided with improved reliability. A semiconductor chip is mounted over a chip mounting portion of a lead frame via solder. A metal plate is arranged over a source pad of the semiconductor chip and a lead portion of a lead frame via solder. A solder reflow process is performed thereby to bond the semiconductor chip over the chip mounting portion with a solder, and to bond the metal plate to the source pad and the lead portion with the other solders. The lead frame is formed of a copper alloy, and thus has its softening temperature higher than the temperature of the solder reflow process. The metal plate is formed of oxygen-free copper, and has its softening temperature lower than the temperature of the solder reflow process, whereby the metal plate is softened in the solder reflow process. Thereafter, a gate pad electrode of the semiconductor chip is coupled to a lead portion via the wire, a sealing resin portion is formed, and then the lead frame is cut.
公开/授权文献
- US20100123240A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2010-05-20
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