Invention Grant
US08300469B2 Cost saving electrically-erasable-programmable read-only memory (EEPROM) array
有权
节省成本的可擦写可编程只读存储器(EEPROM)阵列
- Patent Title: Cost saving electrically-erasable-programmable read-only memory (EEPROM) array
- Patent Title (中): 节省成本的可擦写可编程只读存储器(EEPROM)阵列
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Application No.: US12854407Application Date: 2010-08-11
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Publication No.: US08300469B2Publication Date: 2012-10-30
- Inventor: Hsin Chang Lin , Chia-Hao Tai , Yang-Sen Yen , Ming-Tsang Yang , Ya-Ting Fan
- Applicant: Hsin Chang Lin , Chia-Hao Tai , Yang-Sen Yen , Ming-Tsang Yang , Ya-Ting Fan
- Applicant Address: TW Hsinchu County
- Assignee: Yield Microelectronics Corp.
- Current Assignee: Yield Microelectronics Corp.
- Current Assignee Address: TW Hsinchu County
- Agency: Rosenberg, Klein & Lee
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A cost saving EEPROM array, having: a plurality of parallel bit lines, a plurality of parallel word lines, and a plurality of parallel common source lines. The bit lines contain a first group bit lines; the word line includes a first and a second word lines; and the common source line includes a first common source line. And, a plurality of sub-memory arrays are provided. Each sub-memory array includes a first and a second memory cells disposed opposite to each other and located on two different sides of the first common source line; the first memory cell is connected to the first group bit lines, the first common source line, and the first word line, and the second memory cell is connected to the first group bit line, the first common source line, and the second word line.
Public/Granted literature
- US20120039129A1 COST SAVING ELECTRICALLY-ERASABLE-PROGRAMMABLE READ-ONLY MEMORY (EEPROM) ARRAY Public/Granted day:2012-02-16
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