Invention Grant
- Patent Title: Leakage aware design post-processing
- Patent Title (中): 泄漏感知设计后处理
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Application No.: US12689481Application Date: 2010-01-19
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Publication No.: US08302068B2Publication Date: 2012-10-30
- Inventor: James A. Culp , Lars W. Liebmann
- Applicant: James A. Culp , Lars W. Liebmann
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Yuanmin Cai; Todd Li
- Main IPC: G06F15/04
- IPC: G06F15/04 ; G06F17/50

Abstract:
The present invention provides a method and computer program product for designing an on-wafer target for use by a model-based design tool such as OPC or OPC verification. The on-wafer target is modified by modifying a critical dimension so as to improve or optimize an electrical characteristic, while also ensuring that one or more yield constraints are satisfied. The use of an electrically optimized target can result in cost-effective mask designs that better meet the designers' intent.
Public/Granted literature
- US20110179391A1 LEAKAGE AWARE DESIGN POST-PROCESSING Public/Granted day:2011-07-21
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