A vapor phase deposition apparatus 100 for forming a thin film comprising a chamber 1060, a piping unit 120 for supplying a source material of the thin film into the chamber 1060 in a gaseous condition, a vaporizer 202 for vaporizing the source material in a source material container 112 and supplying the vaporized gas in the piping unit 120 and a temperature control unit 180, is presented. The temperature control unit 180 comprises: a first temperature control unit 174, which is composed of a heater controller unit 172 and a tape heater 170 and is capable of controlling the temperature of the first piping 116 in the piping unit 120 that is directly connected to the chamber 1060; a second temperature control unit 176, which is composed of a heater controller unit 168 and a tape heater 166 and is capable of controlling the temperature of the second piping 114 that is connected to the vaporizer; and a third temperature control unit 178, which is composed of a heater controller unit 167 and a thermostatic chamber 153 and is capable of controlling the temperature of the valve 159.