发明授权
US08304279B2 Light emitting diode package having anodized insulation layer and fabrication method therefor
有权
具有阳极氧化绝缘层的发光二极管封装及其制造方法
- 专利标题: Light emitting diode package having anodized insulation layer and fabrication method therefor
- 专利标题(中): 具有阳极氧化绝缘层的发光二极管封装及其制造方法
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申请号: US13220258申请日: 2011-08-29
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公开(公告)号: US08304279B2公开(公告)日: 2012-11-06
- 发明人: Young Ki Lee , Seog Moon Choi , Sang Hyun Shin
- 申请人: Young Ki Lee , Seog Moon Choi , Sang Hyun Shin
- 申请人地址: KR Seoul
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: McDermott Will & Emery LLP
- 优先权: KR10-2006-0031093 20060405
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
An LED package having an anodized insulation layer which increases heat radiation effect to prolong the lifetime LEDs and maintains high luminance and high output, and a method therefor. The LED package includes an Al substrate having a reflecting region and a light source mounted on the substrate and connected to patterned electrodes. The package also includes an anodized insulation layer formed between the patterned electrodes and the substrate and a lens covering over the light source of the substrate. The Al substrate provides superior heat radiation effect of the LED, thereby significantly increasing the lifetime and light emission efficiency of the LED.