发明授权
- 专利标题: Method for low temperature ion implantation
- 专利标题(中): 低温离子注入方法
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申请号: US13351334申请日: 2012-01-17
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公开(公告)号: US08304330B2公开(公告)日: 2012-11-06
- 发明人: John D. Pollock , Zhimin Wan , Erik Collart
- 申请人: John D. Pollock , Zhimin Wan , Erik Collart
- 申请人地址: US CA San Jose
- 专利权人: Advanced Ion Beam Technology, Inc.
- 当前专利权人: Advanced Ion Beam Technology, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Rosenberg, Klein & Lee
- 主分类号: H01L21/425
- IPC分类号: H01L21/425
摘要:
Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.
公开/授权文献
- US20120115318A1 METHOD FOR LOW TEMPERATURE ION IMPLANTATION 公开/授权日:2012-05-10