公开(公告)号：US20120115318A1

公开(公告)日：2012-05-10

申请号：US13351334

申请日：2012-01-17

申请人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

发明人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC分类号： H01L21/265

CPC分类号： C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

摘要： Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

摘要翻译： 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始植入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US08039374B2

公开(公告)日：2011-10-18

申请号：US12727573

申请日：2010-03-19

申请人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

发明人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01L21/425

CPC分类号： H01L21/265 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67248 ,  Y10S438/905

摘要： Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

摘要翻译： 提供了低温离子注入技术，以提高产量。 具体地说，在植入过程开始之前，背面气体的压力可以暂时地，持续地或连续增加，使得晶片可以从室温快速冷却到基本等于规定的植入温度。 此外，在真空排气过程之后，晶片可以在晶片移出离子注入机之前在加载锁定室中等待额外的时间，以便允许晶片温度快速达到更高的温度以使晶片上的水冷凝最小化 表面。 此外，为了在晶片温度变化期间精确地监视晶片温度，可以使用非接触型温度测量装置以最小化的冷凝实时监测晶片温度。

公开(公告)号：US08304330B2

公开(公告)日：2012-11-06

申请号：US13351334

申请日：2012-01-17

申请人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

发明人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01L21/425

CPC分类号： C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

摘要： Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

摘要翻译： 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始注入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US20120097861A1

公开(公告)日：2012-04-26

申请号：US13280162

申请日：2011-10-24

申请人： Nicholas White ,  Zhimin Wan ,  Erik Collart

发明人： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01J3/20 ,  H01J3/14 ,  H01J3/26

CPC分类号： H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

摘要： A deceleration apparatus capable of decelerating a short spot beam or a tall. ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

摘要翻译： 减速装置，能够使短点梁或高度减速。 公开了带状束。 在任一种情况下，都会控制趋向于降低光束轮廓形状的效果。 提供了用于将离子束屏蔽到外部电位的盖子。 其位置和电位可调的电极设置在梁的相对两侧，以确保减速和偏转电场的形状不会显着偏离最佳形状，即使存在显着的空间电荷高 目前低能量的重离子束。

公开(公告)号：US08941077B2

公开(公告)日：2015-01-27

申请号：US13280162

申请日：2011-10-24

申请人： Nicholas White ,  Zhimin Wan ,  Erik Collart

发明人： Nicholas White ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01J1/88 ,  H01J3/26 ,  H01J3/04 ,  H01J37/317

CPC分类号： H01J37/05 ,  H01J3/04 ,  H01J3/26 ,  H01J37/1472 ,  H01J37/3007 ,  H01J37/3171 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/057 ,  H01J2237/151 ,  H01J2237/303 ,  H01J2237/31701

摘要： A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.

摘要翻译： 公开了一种减速装置，能够使短点光束或高色带光束减速。 在任一种情况下，都会控制趋向于降低光束轮廓形状的效果。 提供了用于将离子束屏蔽到外部电位的盖子。 其位置和电位可调的电极设置在梁的相对两侧，以确保减速和偏转电场的形状不会显着偏离最佳形状，即使存在显着的空间电荷高 目前低能量的重离子束。

公开(公告)号：US08124508B2

公开(公告)日：2012-02-28

申请号：US12750983

申请日：2010-03-31

申请人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

发明人： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC分类号： H01L21/425

CPC分类号： C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

摘要： Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

公开(公告)号：US20110244669A1

公开(公告)日：2011-10-06

申请号：US12750983

申请日：2010-03-31

申请人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

发明人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC分类号： H01L21/265

CPC分类号： C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

摘要： Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

摘要翻译： 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始植入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US20110229987A1

公开(公告)日：2011-09-22

申请号：US12727573

申请日：2010-03-19

申请人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

发明人： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC分类号： H01L21/66 ,  H01L21/265

CPC分类号： H01L21/265 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67248 ,  Y10S438/905

摘要： Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

摘要翻译： 提供了低温离子注入技术，以提高产量。 具体地说，在植入过程开始之前，背面气体的压力可以暂时地，持续地或连续增加，使得晶片可以从室温快速冷却到基本等于规定的植入温度。 此外，在真空排气过程之后，晶片可以在晶片移出离子注入机之前在加载锁定室中等待额外的时间，以便允许晶片温度快速达到更高的温度以使晶片上的水冷凝最小化 表面。 此外，为了在晶片温度变化期间精确地监视晶片温度，可以使用非接触型温度测量装置以最小化的冷凝实时监测晶片温度。