Invention Grant
US08304354B2 Methods to avoid laser anneal boundary effect within BSI CMOS image sensor array
有权
BSI CMOS图像传感器阵列中避免激光退火边界效应的方法
- Patent Title: Methods to avoid laser anneal boundary effect within BSI CMOS image sensor array
- Patent Title (中): BSI CMOS图像传感器阵列中避免激光退火边界效应的方法
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Application No.: US12765496Application Date: 2010-04-22
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Publication No.: US08304354B2Publication Date: 2012-11-06
- Inventor: Kai-Chun Hsu , Yeur-Luen Tu , Chung Chien Wang , Tzu-Hsuan Hsu , Ching-Chun Wang
- Applicant: Kai-Chun Hsu , Yeur-Luen Tu , Chung Chien Wang , Tzu-Hsuan Hsu , Ching-Chun Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/31
- IPC: H01L21/31

Abstract:
Methods are disclosed herein for determining the laser beam size and the scan pattern of laser annealing when fabricating backside illumination (BSI) CMOS image sensors to keep dark-mode stripe patterns corresponding to laser scan boundary effects from occurring within the sensor array regions of the image sensors. Each CMOS image sensor has a sensor array region and a periphery circuit. The methods determines a size of the laser beam from a length of the sensor array region and a length of the periphery circuit so that the laser beam covers an integer number of the sensor array region for at least one alignment of the laser beam on the array of BSI image sensors. The methods further determines a scan pattern so that the boundary of the laser beam does not overlap the sensor array regions during the laser annealing, but only overlaps the periphery circuits.
Public/Granted literature
- US20110263069A1 METHODS TO AVOID LASER ANNEAL BOUNDARY EFFECT WITHIN BSI CMOS IMAGE SENSOR ARRAY Public/Granted day:2011-10-27
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