Invention Grant
- Patent Title: Low parasitic capacitance electrostatic discharge protection circuit
- Patent Title (中): 低寄生电容静电放电保护电路
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Application No.: US12795386Application Date: 2010-06-07
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Publication No.: US08305718B2Publication Date: 2012-11-06
- Inventor: Bo-Jr Huang , Huei Wang
- Applicant: Bo-Jr Huang , Huei Wang
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW99105592A 20100226
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H1/00 ; H02H1/04 ; H02H3/22 ; H02H9/06
Abstract:
The present invention relates to an electrostatic discharge (ESD) protection circuit, and more particularly to a low parasitic capacitance electrostatic discharge protection circuit. An ESD protection circuit is established with the structure in accordance with the present invention comprising a plurality of discharging paths. The ESD protection circuit is connected to the input/output pad of a radio frequency (RF) core circuit. Such that, the RF core circuit with the ESD protection circuit of the present invention feature much higher ESD robustness. And the parasitic capacitance of the ESD protection is reduced because of the structure of the present invention.
Public/Granted literature
- US20110211285A1 LOW PARASITIC CAPACITANCE ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT Public/Granted day:2011-09-01
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