Invention Grant
- Patent Title: Fabrication of reflective layer on semiconductor light emitting devices
- Patent Title (中): 在半导体发光器件上制造反射层
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Application No.: US11578281Application Date: 2005-03-01
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Publication No.: US08309377B2Publication Date: 2012-11-13
- Inventor: Shu Yuan , Xuejun Kang
- Applicant: Shu Yuan , Xuejun Kang
- Applicant Address: SG Singapore
- Assignee: Tinggi Technologies Private Limited
- Current Assignee: Tinggi Technologies Private Limited
- Current Assignee Address: SG Singapore
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Priority: SG200401964-2 20040407
- International Application: PCT/SG2005/000062 WO 20050301
- International Announcement: WO2005/098974 WO 20051020
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Fabrication of Reflective Layer on Semiconductor Light emitting diodes A method for fabrication of a reflective layer on a semiconductor light emitting diode, the semiconductor light emitting diode having a wafer with multiple epitaxial layers on a substrate; the method comprising applying a first ohmic contact layer on a front surface of the multiple epitaxial layers, the first ohmic contact layer being of a reflective material to also act as a reflective layer.
Public/Granted literature
- US20080121908A1 Fabrication of Reflective Layer on Semconductor Light Emitting Devices Public/Granted day:2008-05-29
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