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US08309377B2 Fabrication of reflective layer on semiconductor light emitting devices 有权
在半导体发光器件上制造反射层

Fabrication of reflective layer on semiconductor light emitting devices
Abstract:
Fabrication of Reflective Layer on Semiconductor Light emitting diodes A method for fabrication of a reflective layer on a semiconductor light emitting diode, the semiconductor light emitting diode having a wafer with multiple epitaxial layers on a substrate; the method comprising applying a first ohmic contact layer on a front surface of the multiple epitaxial layers, the first ohmic contact layer being of a reflective material to also act as a reflective layer.
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