Invention Grant
- Patent Title: Field effect transistor device with shaped conduction channel
- Patent Title (中): 具有形状导通通道的场效应晶体管器件
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Application No.: US12860977Application Date: 2010-08-23
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Publication No.: US08309418B2Publication Date: 2012-11-13
- Inventor: Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
- Applicant: Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A field effect transistor device includes a substrate, a silicon germanium (SiGe) layer disposed on the substrate, gate dielectric layer lining a surface of a cavity defined by the substrate and the silicon germanium layer, a metallic gate material on the gate dielectric layer, the metallic gate material filling the cavity, a source region, and a drain region.
Public/Granted literature
- US20120043585A1 Field Effect Transistor Device with Shaped Conduction Channel Public/Granted day:2012-02-23
Information query
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