发明授权
- 专利标题: Low clamp voltage ESD method
- 专利标题(中): 低钳位电压ESD方法
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申请号: US12890878申请日: 2010-09-27
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公开(公告)号: US08309422B2公开(公告)日: 2012-11-13
- 发明人: David D. Marreiro , Sudhama C. Shastri , Ali Salih , Mingjiao Liu , John Michael Parsey, Jr.
- 申请人: David D. Marreiro , Sudhama C. Shastri , Ali Salih , Mingjiao Liu , John Michael Parsey, Jr.
- 申请人地址: US AZ Phoenix
- 专利权人: Semiconductor Components Industries, LLC
- 当前专利权人: Semiconductor Components Industries, LLC
- 当前专利权人地址: US AZ Phoenix
- 代理商 Robert F. Hightower
- 主分类号: H01L29/866
- IPC分类号: H01L29/866
摘要:
In one embodiment, an ESD device is configured to include a zener diode and a P-N diode and to have a conductor that provides a current path between the zener diode and the P-N diode.
公开/授权文献
- US20110021009A1 LOW CLAMP VOLTAGE ESD METHOD 公开/授权日:2011-01-27