发明授权
- 专利标题： Semiconductor manufacturing apparatus and semiconductor manufacturing method
- 专利标题（中）： 半导体制造装置及半导体制造方法
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申请号： US13035182申请日： 2011-02-25
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公开(公告)号： US08309430B2公开(公告)日： 2012-11-13
- 发明人: Kazumasa Tanida , Naoko Yamaguchi , Satoshi Hongo , Chiaki Takubo , Hideo Numata
- 申请人： Kazumasa Tanida , Naoko Yamaguchi , Satoshi Hongo , Chiaki Takubo , Hideo Numata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2010-047029 20100303
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; B32B37/00 ; B32B41/00
摘要：
According to one embodiment, a first substrate and a second substrate are pressed from an opposite surface of a joint surface of the second substrate such that a joint surface of the first substrate and the joint surface of the second substrate are in contact with each other. The second substrate is restrained by a member to provide a gap between the joint surfaces. It is determined, based on a temporal change of a joint interface calculated based on an image imaged from the opposite surface side of the joint surface, whether joining is normally performed.
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