发明授权
- 专利标题: Semiconductor device and wafer structure
- 专利标题(中): 半导体器件和晶圆结构
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申请号: US12985344申请日: 2011-01-06
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公开(公告)号: US08310065B2公开(公告)日: 2012-11-13
- 发明人: Hui-Min Wu , Bang-Chiang Lan , Chien-Hsin Huang , Kuan-Yu Wang , Chao-An Su , Tzung-I Su
- 申请人: Hui-Min Wu , Bang-Chiang Lan , Chien-Hsin Huang , Kuan-Yu Wang , Chao-An Su , Tzung-I Su
- 申请人地址: TW Science-Based Industrial Park, Hsin-Chu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号: H01L23/48
- IPC分类号: H01L23/48
摘要:
A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.
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