Invention Grant
- Patent Title: Semiconductor device and wafer structure
- Patent Title (中): 半导体器件和晶圆结构
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Application No.: US12985344Application Date: 2011-01-06
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Publication No.: US08310065B2Publication Date: 2012-11-13
- Inventor: Hui-Min Wu , Bang-Chiang Lan , Chien-Hsin Huang , Kuan-Yu Wang , Chao-An Su , Tzung-I Su
- Applicant: Hui-Min Wu , Bang-Chiang Lan , Chien-Hsin Huang , Kuan-Yu Wang , Chao-An Su , Tzung-I Su
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.
Public/Granted literature
- US20120175778A1 SEMICONDUCTOR DEVICE, WAFER STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2012-07-12
Information query
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