公开(公告)号：US20130093104A1

公开(公告)日：2013-04-18

申请号：US13272289

申请日：2011-10-13

Applicant: Hui-Min WU ,  Ming-I Wang ,  Kuan-Yu Wang ,  Kun-Che Hsieh ,  Chien-Hsin Huang

Inventor： Hui-Min WU ,  Ming-I Wang ,  Kuan-Yu Wang ,  Kun-Che Hsieh ,  Chien-Hsin Huang

IPC: H01L23/485 ,  H01L21/768

CPC classification number: H01L23/3192 ,  B81B7/0006 ,  B81B2207/015 ,  H01L23/291 ,  H01L23/293 ,  H01L24/05 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A bond pad structure comprises an interconnection structure and an isolation layer. The dielectric layer has an opening and a metal pad. The isolation layer is disposed on the interconnection structure and extends into the opening until it is in contact with the metal pad, whereby the sidewalls of the opening is blanketed by the isolation layer, and a portion of the metal pad is exposed from the opening.

Abstract translation: 接合焊盘结构包括互连结构和隔离层。 电介质层具有开口和金属垫。 隔离层设置在互连结构上并延伸到开口中直到与金属垫接触，由此隔离层覆盖开口的侧壁，并且金属垫的一部分从开口露出。

公开(公告)号：US08310065B2

公开(公告)日：2012-11-13

申请号：US12985344

申请日：2011-01-06

Applicant: Hui-Min Wu ,  Bang-Chiang Lan ,  Chien-Hsin Huang ,  Kuan-Yu Wang ,  Chao-An Su ,  Tzung-I Su

Inventor： Hui-Min Wu ,  Bang-Chiang Lan ,  Chien-Hsin Huang ,  Kuan-Yu Wang ,  Chao-An Su ,  Tzung-I Su

IPC: H01L23/48

CPC classification number: B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L21/76829 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.

Abstract translation: 晶片结构的制造方法包括：提供具有多个管芯区域的衬底和围绕限定在其上的管芯区域的边缘区域; 然后在所述管芯区域中的所述衬底上形成电介质层，多个MEMS器件，多个金属互连结构和多个接合焊盘; 接下来，去除设置在边缘区域的基板上的电介质层，以露出基板; 然后形成钝化层以覆盖基板和电介质层。

公开(公告)号：US08525354B2

公开(公告)日：2013-09-03

申请号：US13272289

申请日：2011-10-13

Applicant: Hui-Min Wu ,  Ming-I Wang ,  Kuan-Yu Wang ,  Kun-Che Hsieh ,  Chien-Hsin Huang

Inventor： Hui-Min Wu ,  Ming-I Wang ,  Kuan-Yu Wang ,  Kun-Che Hsieh ,  Chien-Hsin Huang

IPC: H01L23/48 ,  H01L21/44

CPC classification number: H01L23/3192 ,  B81B7/0006 ,  B81B2207/015 ,  H01L23/291 ,  H01L23/293 ,  H01L24/05 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A bond pad structure comprises an interconnection structure and an isolation layer. The dielectric layer has an opening and a metal pad. The isolation layer is disposed on the interconnection structure and extends into the opening until it is in contact with the metal pad, whereby the sidewalls of the opening is blanketed by the isolation layer, and a portion of the metal pad is exposed from the opening.

Abstract translation: 接合焊盘结构包括互连结构和隔离层。 电介质层具有开口和金属垫。 隔离层设置在互连结构上并延伸到开口中直到与金属垫接触，由此隔离层覆盖开口的侧壁，并且金属垫的一部分从开口露出。

公开(公告)号：US20120175778A1

公开(公告)日：2012-07-12

申请号：US12985344

申请日：2011-01-06

Applicant: Hui-Min Wu ,  Bang-Chiang Lan ,  Chien-Hsin Huang ,  Kuan-Yu Wang ,  Chao-An Su ,  Tzung-I Su

Inventor： Hui-Min Wu ,  Bang-Chiang Lan ,  Chien-Hsin Huang ,  Kuan-Yu Wang ,  Chao-An Su ,  Tzung-I Su

IPC: H01L23/482 ,  H01L23/488 ,  H01L21/768

CPC classification number: B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L21/76829 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A fabrication method of a wafer structure includes: providing a substrate having a plurality of die regions and an edge region surrounding the die regions defined thereon; then, forming a dielectric layer, a plurality of MEMS devices, a plurality of metal-interconnect structures and a plurality bonding pads on the substrate in the die regions; next, removing the dielectric layer disposed on the substrate of the edge region to expose the substrate; and thereafter, forming a passivation layer to cover the substrate and the dielectric layer.

Abstract translation: 晶片结构的制造方法包括：提供具有多个管芯区域的衬底和围绕限定在其上的管芯区域的边缘区域; 然后在所述管芯区域中的所述衬底上形成电介质层，多个MEMS器件，多个金属互连结构和多个接合焊盘; 接下来，去除设置在边缘区域的基板上的电介质层，以露出基板; 然后形成钝化层以覆盖基板和电介质层。