A gate driving circuit having improved driving capability and maintaining reliability even after a prolonged period of use includes a shift register having a plurality of stages cascaded to one another, each of the plurality of stages including a pull-up unit, a pull-down unit, a discharging unit, and a holding unit, wherein at least one of the discharging unit and the holding unit includes an amorphous silicon thin film transistor and a polysilicon thin film transistor connected in parallel to each other.