发明授权
- 专利标题： Singulation method and resulting device of thick gallium and nitrogen containing substrates
- 专利标题（中）： 分离方法和得到的厚镓和氮的基板的装置
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申请号： US13163498申请日： 2011-06-17
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公开(公告)号： US08313964B2公开(公告)日： 2012-11-20
- 发明人: Rajat Sharma , Thomas M. Katona , Andrew Felker
- 申请人： Rajat Sharma , Thomas M. Katona , Andrew Felker
- 申请人地址： US CA Fremont
- 专利权人： Soraa, Inc.
- 当前专利权人： Soraa, Inc.
- 当前专利权人地址： US CA Fremont
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.
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