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    Singulation method and resulting device of thick gallium and nitrogen containing substrates
    1.
    发明授权
    Singulation method and resulting device of thick gallium and nitrogen containing substrates 有权
    分离方法和得到的厚镓和氮的基板的装置

    公开(公告)号：US08313964B2

    公开(公告)日：2012-11-20

    申请号：US13163498

    申请日：2011-06-17

    申请人： Rajat Sharma ,  Thomas M. Katona ,  Andrew Felker

    发明人： Rajat Sharma ,  Thomas M. Katona ,  Andrew Felker

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0095

    摘要： A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.

    摘要翻译： 通过使用双面激光刻划工艺对粗GaN晶片（例如，300-400μm）进行单片化的方法。 在优选实施例中，使用激光刻划在基板的每一侧上处理图案化的GaN衬底，以形成刻划线。 划线相互对准。 在一个优选的实施方式中，基片未经过减薄或抛光工艺以减小其厚度。

    Singulation Method and Resulting Device of Thick Gallium and Nitrogen Containing Substrates
    2.
    发明申请
    Singulation Method and Resulting Device of Thick Gallium and Nitrogen Containing Substrates 有权
    粗镓和含氮基板的分割方法及其结果

    公开(公告)号：US20110309373A1

    公开(公告)日：2011-12-22

    申请号：US13163498

    申请日：2011-06-17

    申请人： Rajat Sharma ,  Thomas M. Katona ,  Andrew Felker

    发明人： Rajat Sharma ,  Thomas M. Katona ,  Andrew Felker

    IPC分类号： H01L33/02

    CPC分类号： H01L33/0095

    摘要： A method for singulation of thick GaN wafers (e.g., 300-400 um) through the use of a double-side laser-scribe process. In a preferred embodiment, the patterned GaN substrate is processed using a laser-scribe on each side of the substrate to form scribe lines. The scribe lines are aligned to each other. In a preferred embodiment, the substrate has not been subjected to a thinning or polishing process for reducing its thickness.

    摘要翻译： 通过使用双面激光刻划工艺对粗GaN晶片（例如，300-400μm）进行单片化的方法。 在优选实施例中，使用激光刻划在基板的每一侧上处理图案化的GaN衬底，以形成刻划线。 划线相互对准。 在一个优选的实施方式中，基片未经过减薄或抛光工艺以减小其厚度。