发明授权
- 专利标题: Method for manufacturing photoelectric conversion device
- 专利标题(中): 制造光电转换装置的方法
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申请号: US13222423申请日: 2011-08-31
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公开(公告)号: US08313975B2公开(公告)日: 2012-11-20
- 发明人: Fumito Isaka , Sho Kato , Junpei Momo
- 申请人: Fumito Isaka , Sho Kato , Junpei Momo
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2008-037733 20080219
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; H01L21/301
摘要:
The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved.
公开/授权文献
- US20110318864A1 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 公开/授权日:2011-12-29
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