发明授权
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12700502申请日: 2010-02-04
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公开(公告)号: US08314464B2公开(公告)日: 2012-11-20
- 发明人: Masayoshi Iwayama , Yoshiaki Asao , Takeshi Kajiyama
- 申请人: Masayoshi Iwayama , Yoshiaki Asao , Takeshi Kajiyama
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 优先权: JP2009-214809 20090916
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion in a linear form in a channel region between the source/drain regions. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. A film thickness of the second portion of the second semiconductor layer is smaller than a film thickness of the first portion of the second semiconductor layer.
公开/授权文献
- US20110062421A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2011-03-17
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