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US08319206B2 Thin film transistors comprising surface modified carbon nanotubes 有权
包含表面改性碳纳米管的薄膜晶体管

Thin film transistors comprising surface modified carbon nanotubes
摘要:
A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility.
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