发明授权
- 专利标题： Semiconductor device and method for manufacturing of the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12654936申请日： 2010-01-08
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公开(公告)号： US08319309B2公开(公告)日： 2012-11-27
- 发明人: Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
- 申请人： Woo Chul Jeon , Jung Hee Lee , Young Hwan Park , Ki Yeol Park
- 申请人地址： KR Suwon
- 专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人： Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址： KR Suwon
- 优先权： KR10-2009-0080746 20090828; KR10-2009-0080747 20090828
- 主分类号： H01L27/095
- IPC分类号： H01L27/095
摘要：
The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode.
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