发明授权
- 专利标题: Hybrid STI gap-filling approach
- 专利标题(中): 混合STI间隙填充方法
-
申请号: US12688939申请日: 2010-01-18
-
公开(公告)号: US08319311B2公开(公告)日: 2012-11-27
- 发明人: Neng-Kuo Chen , Cheng-Yuan Tsai , Kuo-Hwa Tzeng
- 申请人: Neng-Kuo Chen , Cheng-Yuan Tsai , Kuo-Hwa Tzeng
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L29/78
- IPC分类号: H01L29/78
摘要:
A method of forming an integrated circuit structure includes providing a semiconductor substrate including a top surface; forming an opening extending from the top surface into the semiconductor substrate; and performing a first deposition step to fill a first dielectric material into the opening. The first dielectric material is then recessed. A second deposition step is performed to fill a remaining portion of the opening with a second dielectric material. The second dielectric material is denser than the first dielectric material. The second dielectric material is recessed until a top surface of the second dielectric material is lower than the top surface of the semiconductor substrate.
公开/授权文献
- US20100230757A1 Hybrid STI Gap-Filling Approach 公开/授权日:2010-09-16