Invention Grant
- Patent Title: Embedded laminated device
- Patent Title (中): 嵌入式层压装置
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Application No.: US12538470Application Date: 2009-08-10
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Publication No.: US08319334B2Publication Date: 2012-11-27
- Inventor: Martin Standing
- Applicant: Martin Standing
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L21/00

Abstract:
An electronic device includes at least one semiconductor chip, each semiconductor chip defining a first main face and a second main face opposite to the first main face. A first metal layer is coupled to the first main face of the at least one semiconductor chip and a second metal layer is coupled to the second main face of the at least one semiconductor chip. A third metal layer overlies the first metal layer and a fourth metal layer overlies the second metal layer. A first through-connection extends from the third metal layer to the fourth metal layer, the first through-connection being electrically connected with the first metal layer and electrically disconnected from the second metal layer. A second through-connection extends from the third metal layer to the fourth metal layer, the second through-connection being electrically connected with the second metal layer and electrically disconnected from the first metal layer.
Public/Granted literature
- US20110031611A1 EMBEDDED LAMINATED DEVICE Public/Granted day:2011-02-10
Information query
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