Invention Grant
- Patent Title: Information storage devices using magnetic domain wall movement and methods of operating the same
- Patent Title (中): 信息存储设备采用磁畴壁运动和操作方式相同
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Application No.: US12385859Application Date: 2009-04-22
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Publication No.: US08320152B2Publication Date: 2012-11-27
- Inventor: Young-jin Cho , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Sung-chul Lee , Ji-young Bae
- Applicant: Young-jin Cho , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Sung-chul Lee , Ji-young Bae
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0068342 20080714
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.
Public/Granted literature
- US20100008135A1 Information storage devices using magnetic domain wall movement and methods of operating the same Public/Granted day:2010-01-14
Information query