公开(公告)号：US08144503B2

公开(公告)日：2012-03-27

申请号：US12457908

申请日：2009-06-25

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

IPC分类号： G11C11/00

CPC分类号： G11C11/1657 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.

摘要翻译： 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。

公开(公告)号：US20100232055A1

公开(公告)日：2010-09-16

申请号：US12588333

申请日：2009-10-13

申请人： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae ,  Jin-seong Heo

发明人： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae ,  Jin-seong Heo

IPC分类号： G11B5/58

CPC分类号： G11B5/584 ,  G11B5/581 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.

摘要翻译： 信息存储装置包括具有缓冲轨道和连接到缓冲轨迹的多个存储轨道的磁结构。 写/读单元设置在磁结构上，并且多个开关装置分别连接到缓冲磁道，多个存储磁道和写/读单元。 分别连接到缓冲器轨道和存储轨道的开关装置。 信息存储装置还包括被配置为向磁结构和写入/读取单元中的至少一个提供电流的电路。

公开(公告)号：US20100008135A1

公开(公告)日：2010-01-14

申请号：US12385859

申请日：2009-04-22

申请人： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-Young Bae

发明人： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-Young Bae

IPC分类号： G11C11/14 ,  G11C11/416

CPC分类号： G01R33/12 ,  G01R33/1207 ,  G01R33/1284 ,  G01R33/1292 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841

摘要： An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.

摘要翻译： 信息存储装置包括存储节点，写入单元，被配置为向存储节点的第一磁畴区域写入信息;以及读取单元，被配置为从存储节点的第二磁畴区域读取信息。 所述信息存储装置还包括临时存储单元，其被配置为临时存储由所述读取单元读取的信息;以及写入控制单元，电连接到所述临时存储单元并且被配置为控制提供给所述写入单元的电流。 从第二磁畴区域读取的信息存储在临时存储单元中，并写入第一磁畴区域。

公开(公告)号：US08320152B2

公开(公告)日：2012-11-27

申请号：US12385859

申请日：2009-04-22

申请人： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-young Bae

发明人： Young-jin Cho ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Sung-chul Lee ,  Ji-young Bae

IPC分类号： G11C7/00

CPC分类号： G01R33/12 ,  G01R33/1207 ,  G01R33/1284 ,  G01R33/1292 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841

摘要： An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.

摘要翻译： 信息存储装置包括存储节点，写入单元，被配置为向存储节点的第一磁畴区域写入信息;以及读取单元，被配置为从存储节点的第二磁畴区域读取信息。 所述信息存储装置还包括临时存储单元，其被配置为临时存储由所述读取单元读取的信息;以及写入控制单元，电连接到所述临时存储单元并且被配置为控制提供给所述写入单元的电流。 从第二磁畴区域读取的信息存储在临时存储单元中，并写入第一磁畴区域。

公开(公告)号：US08045371B2

公开(公告)日：2011-10-25

申请号：US12588333

申请日：2009-10-13

申请人： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae ,  Jin-seong Heo

发明人： Sung-chul Lee ,  Hyung-soon Shin ,  Seung-jun Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae ,  Jin-seong Heo

IPC分类号： G11C11/15

CPC分类号： G11B5/584 ,  G11B5/581 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.

摘要翻译： 信息存储装置包括具有缓冲轨道和连接到缓冲轨迹的多个存储轨道的磁结构。 写/读单元设置在磁结构上，并且多个开关装置分别连接到缓冲磁道，多个存储磁道和写/读单元。 分别连接到缓冲器轨道和存储轨道的开关装置。 信息存储装置还包括被配置为向磁结构和写入/读取单元中的至少一个提供电流的电路。

公开(公告)号：US20100157663A1

公开(公告)日：2010-06-24

申请号：US12457908

申请日：2009-06-25

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

IPC分类号： G11C11/00 ,  G11C7/00

CPC分类号： G11C11/1657 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.

摘要翻译： 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。

公开(公告)号：US08574730B2

公开(公告)日：2013-11-05

申请号：US12155896

申请日：2008-06-11

申请人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

发明人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

IPC分类号： G11B5/76 ,  G11C19/08 ,  H01L35/04

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

公开(公告)号：US08525601B2

公开(公告)日：2013-09-03

申请号：US12654703

申请日：2009-12-29

申请人： Sung-chul Lee ,  Mathias Klaui ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae ,  Jin-seong Heo

发明人： Sung-chul Lee ,  Mathias Klaui ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Ji-young Bae ,  Jin-seong Heo

IPC分类号： H03B17/00

CPC分类号： H03B15/006 ,  Y10T428/1121

摘要： An oscillator generates a signal using precession of a magnetic moment of a magnetic domain wall. The oscillator includes a free layer having the magnetic domain wall and a fixed layer corresponding to the magnetic domain wall. A non-magnetic separation layer is interposed between the free layer and the fixed layer.

摘要翻译： 振荡器使用磁畴壁的磁矩的进动产生信号。 振荡器包括具有磁畴壁的自由层和对应于磁畴壁的固定层。 非磁性分离层介于自由层和固定层之间。

公开(公告)号：US20110045318A1

公开(公告)日：2011-02-24

申请号：US12662215

申请日：2010-04-06

申请人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

发明人： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

IPC分类号： G11B5/66

CPC分类号： G11B5/72 ,  G11B5/7325 ,  G11C11/14

摘要： A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (β).

摘要翻译： 一种磁存储器件包括其中分别在磁性层的上表面和下表面上形成不同非磁性层的轨道。 两个非磁性层中的一个包括具有大于或等于12的原子序数的元素。因此，磁性层具有相对高的非绝热性（＆Bgr）。

公开(公告)号：US20090073859A1

公开(公告)日：2009-03-19

申请号：US12155896

申请日：2008-06-11

申请人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

发明人： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

IPC分类号： G11B3/00

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

摘要翻译： 提供信息存储装置及其制造方法。 信息存储装置的磁道包括其中至少一个磁畴形成区域和至少一个磁畴壁形成区域沿长度方向交替布置的磁性层。 所述至少一个磁畴形成区域相对于所述至少一个磁畴壁形成区域具有不同的磁各向异性能量。 中间层形成在磁性层下面。 中间层包括至少一个第一材料区域和至少一个第二材料区域。 所述至少一个第一材料区域和所述至少一个第二材料区域中的每一个对应于所述至少一个磁畴形成区域和所述至少一个磁畴壁形成区域中的一个。