发明授权
- 专利标题: Information storage devices using magnetic domain wall movement and methods of operating the same
- 专利标题(中): 信息存储设备采用磁畴壁运动和操作方式相同
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申请号: US12385859申请日: 2009-04-22
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公开(公告)号: US08320152B2公开(公告)日: 2012-11-27
- 发明人: Young-jin Cho , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Sung-chul Lee , Ji-young Bae
- 申请人: Young-jin Cho , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Sung-chul Lee , Ji-young Bae
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2008-0068342 20080714
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.