发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12785016申请日： 2010-05-21
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公开(公告)号： US08324040B2公开(公告)日： 2012-12-04
- 发明人: Hiroyuki Ohta
- 申请人： Hiroyuki Ohta
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2005-215479 20050726
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/44
摘要：
A semiconductor device including an n-channel MISFET including source/drain regions 38 formed in a semiconductor substrate 10 with a channel region between them, and a gate electrode 44 of a metal silicide formed over the channel region with a gate insulating film 12 interposed therebetween; and an insulating film 46 formed over the gate electrode 44 from side walls of the gate electrode 44 to an upper surface of the gate electrode 44, having a tensile stress from 1.0 to 2.0 GPa and applying the tensile stress to the channel region.
公开/授权文献
- US20100233860A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2010-09-16
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