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发明授权
US08324063B2 Epitaxial film growing method, wafer supporting structure and susceptor 有权
外延膜生长方法，晶片支撑结构和基座

Epitaxial film growing method, wafer supporting structure and susceptor
摘要：
An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process.
摘要（中）：

设置在晶片收纳部周边的环状台阶部设置在与晶片背面朝向晶片中心的倒角表面的边界线1〜6mm的面积接触的区域。 结果，可以在后表面和倒角表面之间的边界区域中制造没有划痕的外延晶片，并且消除在器件工艺中由划痕产生的微粒。

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